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| NJG1309VB2 TRANSMITTING POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1309VB2 is a positive voltage supply type GaAs power amplifier MMIC designed for Digital Cordless Phone. Gate bias and Gain control bias terminals are supplied by positive voltage. These terminals have high-impedance characteristics. NJG1309VB2 can reduce power consumption at receiving mode by "Standby Function". nPACKAGE OUTLINE NJG1309VB2 nFEATURES lOperating frequency range lPositive voltage supply lLow current consumption lHigh gain lGain control range lPackage f=1.9GHz typ. VDD2,3=+3.0V typ. +VGG=+1.0V typ. 150mA typ. @21dBm output power 37dB typ. @21dBm output power 26dB typ. @21dBm output power SSOP20-B2 (Pin pitch 0.5mm) nPIN CONFIGURATION V Type (Top View) 1 2 3 4 5 6 7 8 9 10 DC/DC Converter CR Oscillator 20 19 18 17 16 15 14 13 12 11 Pin Connection 1.VSTB 2.+VGG 3.-VGG1 4.GND 5.RFin 6.GND 7.GND 8.-VGG2 9.GND 10.GND 11.RFout 12.GND 13.VDD3 14.GND 15VDD2 16.GND 17.GND 18.-VCONT 19.+VCONT 20.VDD1 -1- NJG1309VB2 n ABSOLUTE MAXIMUM RATINGS (Zs=Zl=50, Ta=25C) PARAMETER Drain Voltage 1 Drain Voltage 2 Gate Voltage Gain Control Voltage Standby Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL VDD1 VDD2,3 +VGG +VCONT VSTB Pin PD Topr Tstg VDD2,3=3.0V, +VGG=1.0V At on PCB board +VGG=1.0V +VGG=1.0V VDD2,3=3.0V VDD2,3=3.0V CONDITIONS RATINGS 5.5 6.0 -0.5~VDD1+0.5 -0.5~VDD1+0.5 -0.5~VDD1+0.5 3.0 600 -40~+85 -55~+150 UNITS V V V V V dBm mW C C n ELECTRICAL CHARACTERISTICS 1 (VDD1=3V,VSTB=2.7V, +VCONT=0V, f=1.9GHz, Zs=Zl=50, Ta=25C) PARAMETER perating Frequency Drain Voltage 1 Drain Voltage 2 Standby Terminal Input Voltage (H) Standby Terminal Input Voltage (L) Gain Control Voltage Gate Voltage Idle Current *1 Operating Current *1 VDD1Terminal Current(H) VDD1 Terminal Current(L) VGG1 Terminal Current +VCONT Terminal Current SYMBOL freq VDD1 VDD2,3 VSTB(H) VSTB(L) +VCONT +VGG Iidle IDD2,3 IDD1(H) IDD1(L) IGG ICONT VDD2,3=3.0V, Iidle=130mA VDD2,3=3.0V, RF OFF VDD2,3=3.0V,Iidle=130mA Pout=21dBm VDD2,3=3V,Pout=21dBm VSTB=0V,VDD2,3=0V +VGG=2.0V +VCONT=2.0V CONDITIONS VDD2,3=3.0V MIN 1.85 2.7 2.9 2.4 0.0 0.0 0.6 125 TYP 1.90 3.0 3.0 2.7 0.0 1.0 130 150 0.9 0.5 5 5 MAX 1.95 5.2 5.2 3.0 0.6 2.0 1.4 135 165 1.25 1.0 10 10 UNITS GHz V V V V V V mA mA mA uA uA uA - 2- NJG1309VB2 nELECTRICAL CHARACTERISTICS 1 (VDD1=3V, VSTB=2.7V, +VCONT=0V, f=1.9GHz, Zs=Zl=50, Ta=25C) PARAMETER VSTB Terminal Current -VGG,-VCONT Rise Time*2 -VGG,-VCONT Fall Time*2 +VGG Terminal Input Resistance +VCONT Terminal Input Resistance Power Gain Gain Flatness SYMBOL ISTB TRDD TSTB R1 R2 Gain Gflat VDD2,3=3.0V, Iidle=130mA Pout=21dBm VDD2,3=3.0V, Iidle=130mA Pout=21dBm VDD2,3=3.0V, Iidle=130mA Gain Control Range Pout at 1dB Gain Compression point Harmonics Gcont Pout=21dBm +VCONT=0.0 to 2.0V P-1dB Phm VDD2,3=3.0V, Iidle=130mA VDD2,3=3.0V, Iidle=130mA Pout=21dBm VDD2,3=3.0V, Iidle=130mA Load VSWR tolerance Pout=21dBm, Load VSWR=1:4 All Phase 21 -40 -30 dBm dBc 21 26 31 dB 0.01uF Load Capacitance CONDITIONS MIN 300 300 34 TYP 0.5 500 500 37 1.0 MAX 1.0 400 20 700 700 40 1.5 UNIT uA uSEC mSEC k k dB dB Parasitic oscillation for fundamental signal level: -60dBc - *1: Total current of VDD2 terminal and VDD3 terminal. *2: Timing chart of input terminal voltage is mentioned in the separate sheet of paper. -3- NJG1309VB2 nELECTRICAL CHARACTERISTICS 2 (VDD1=3V, VSTB=2.7V, +VCONT=0V, f=1.765GHz, Zs=Zl=50, Ta=25C) PARAMETER Operating frequency Drain Voltage 1 Drain Voltage 2 Standby Terminal Input Voltage (H) Standby Terminal Input Voltage (L) Gain Control Voltage Gate Voltage Idle Current *1 Operating Current *1 VDD1 Terminal Current(H) VDD1 Terminal Current(L) VGG Terminal Current +VCONT Terminal Current VSTB Terminal Current -VGG,-VCONT Rise Time*2 -VGG,-VCONT Fall Time*2 +VGG Terminal Input Resistance +VCONT Terminal Input Resistance Power Gain Gain Flatness SYMBOL freq VDD1 VDD2,3 VSTB(H) VSTB(L) +VCONT +VGG Iidle IDD2,3 IDD1(H) IDD1(L) IGG ICONT ISTB TRDD TSTB R1 R2 Gain Gflat VDD2,3=3.0V, Iidle=130mA Pout=21dBm VDD2,3=3.0V, Iidle=130mA Pout=21dBm VDD2,3=3.0V, Iidle=130mA Gain Control Range Output Power at 1dB Compression point Harmonics Gcont Pout=21dBm +VCONT=0.0 to 2.0V P-1dB Phm VDD2,3=3.0V, Iidle=130mA VDD2,3=3.0V, Iidle=130mA Pout=21dBm 20 -40 dBm dBc 25 dB 0.01uF Load Capacitance VDD2,3=3.0V, Iidle=130mA VDD2,3=3.0V, RF OFF VDD2,3=3.0V,Iidle=130mA Pout=21dBm VDD2,3=3V,Pout=21dBm VSTB=0V,VDD2,3=0V +VGG=2.0V +VCONT=2.0V CONDITIONS VDD2,3=3.0V MIN 1.750 2.7 2.9 2.4 0.0 0.0 0.6 125 300 300 TYP 1.765 3.0 3.0 2.7 0.0 1.0 130 155 0.9 0.5 5 5 0.5 500 500 36 0.5 MAX 1.780 5.2 5.2 3.0 0.6 2.0 1.4 135 400 20 700 700 UNITS GHz V V V V V V mA mA mA uA uA uA uA uSEC mSEC k k dB dB -4- NJG1309VB2 nELECTRICAL CHARACTERISTICS 2 (VDD1=3V, VSTB=2.7V, +VCONT=0V, f=1.765GHz, Zs=Zl=50, Ta=25C) PARAMETER Load VSWR tolerance SYMBOL CONDITIONS VDD2,3=3.0V, Iidle=130mA Pout=21dBm, Load VSWR=1:4 All Phase MIN TYP MAX UNITS - Parasitic oscillation for fundamental signal level: -60dBc *1:Total current of VDD2 terminal and VDD3 terminal. *2:Timing chart of input terminal voltage is mentioned in the separate sheet of paper. -5- NJG1309VB2 nTIMING CHART 1) Timing chart of setting and shut of supply voltage and control voltage, VDD1 , +VGG ,and VCONT. Notes (1) To prevent latch-up, VDD1should be more than VSTB,+VGG and +VCONT. (2) The rising time of VDD1 is 400uSEC.maximum in case of the recommended circuit. -6- NJG1309VB2 nTIMING CHART 2) Timing chart of burst operation using VSTB. -7- NJG1309VB2 nTERMINAL INFORMATION TERMINAL INFORMATION PIN No. SYMBOL 1 VSTB DESCRIPTIONS The output voltage of DC/DC converter is toggled ON/OFF by changing voltage to this terminal to High/Low. The positive voltage of this terminal is supplied to op-amp 1 in the DC/DC converter, and its output voltage (negative) is internally supplied to the gate ports of #1 to 3 amplifiers. The current of amplifier is controlled by the voltage of this terminal. The voltage of the gate ports of #1 to 3 amplifier are supplied through this terminal. Please place a capacitor at this terminal as close as possible. Ground terminal(0V) This terminal is a signal input terminal connected to input port of amplifier through matching circuit and DC blocking capacitor. Ground terminal(0V) Ground terminal(0V) This terminal is Connected to gate fourth stage amplifier. Please connect with VGG2 terminal on PCB board and place a bypass possible , since this terminal is NOT connected with op-amp input. Ground terminal(0V) Ground terminal(0V) This terminal is a signal output terminal connected to the output port of amplifier through matching circuit and DC blocking capacitor. Ground terminal(0V) This terminal is connected to drain port of fourth stage amplifier. Please place a choke inducter and a bypass capacitor shown in the application circuit below. Ground terminal(0V) The voltage of the gate ports of #1 to 3 amplifier are supplied through this terminal. Please place a capacitor at this terminal as close as possible. Ground terminal(0V) Ground terminal(0V) 2 +VGG 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 -VGG1 GND RFin GND GND -VGG2 GND GND RFout GND VDD3 GND VDD2 GND GND -VCONT This terminal is a gain control terminal of amplifier, and also internally connected to output port of op-amp2. Please place a bypass capacitor at this terminal shown in the application circuit below as close as possible. The positive voltage of this terminal is supplied to op-amp2 in the DC/Dc converter, and its output voltage(negative) is internally supplied to the gain 19 +VCONT control port of amplifier. The gain of amplifier is controlled by the voltage of this terminal. This terminal is a voltage supply terminal of DC/DC converter. Please place 20 VDD1 bypass capacitor shown in the application circuit below as close as possible. NOTE 1) The ground terminal(4,6,7,9,10,12,14,16,17)shond be directly connected to ground plane To minimize fringing inductance. -8- NJG1309VB2 nTYPICAL CHARACTERISTICS Timing Chart 1 (+VGG: DC, X-axis: 1msec/div) VDD1=3Vdc, +VGG=1Vdc, +VCONT=0V VSTB: V0-p=3V, Period=5msec, Duty=50% Timing Chart 2 (+VGG: DC, X-axis: 100usec/div) VDD1=3Vdc, +VGG=1Vdc, +VCONT=0V VSTB: V0-p=3V, Period=5msec, Duty=50% Timing Chart 3(+VGG: Pulse, X-axis: 1msec/div) VDD1=3Vdc, +VCONT=0V +VGG: V0-p=1V, Period=5msec, Duty=50% VSTB: V0-p=3V, Period=5msec, Duty=50% Timing Chart 4(+VGG: Pulse, X-axis: 100usec/div) VDD1=3Vdc, +VCONT=0V +VGG: V0-p=1V, Period=5msec, Duty=50% VSTB: V0-p=3V, Period=5msec, Duty=50% Real vertical voltage scale should be ten times higher than the scale indicated under each graph, because 1:10 probes are used on all of Ch1, Ch2 and Ch3. -9- NJG1309VB2 nTYPICAL CHARACTERISTICS Small Signal Power Gain vs. Frequency V =V =V =3V,I =130mA at T =25 C DD1 STB DD2,3 DD2,3 a 50 Small Signal Power Gain [ dB ] +V 40 +V 30 +V 20 10 0 1.85 CONT o Small Signal Power Gain vs. Frequency V =V =V =3V,I =130mA at T =25 C DD1 STB DD2,3 DD2,3 a 50 Small Signal Power Gain [ dB ] +V 40 +V 30 +V 20 10 CONT o =0.0V =0.9V =1.1V =0.0V =0.9V =1.1V CONT CONT CONT CONT +V CONT =2.0V +V CONT =2.0V 1.90 Freq [ GHz ] 1.95 0 1.750 1.755 1.760 1.765 1.770 1.775 1.780 Freq [ GHz ] Small Signal Power Gain vs. Frequency V =V =V =3V,I =130mA at T =25 C DD1 STB DD2,3 DD2,3 a 50 Small Signal Power Gain [ dB ] +V 40 30 20 CONT o Small Signal Power Gain vs. Frequency 50 Small Siganl Power Gain [ dB ] 40 30 20 I 10 0 I -10 1.0 I DD2,3 DD2,3 V DD1 =V STB =V DD2,3 =3V,+V I CONT =0V at T =25 C a o I =0.0V DD2,3 =160mA DD2,3 =140mA +V CONT =0.9V +V CONT =1.1V =80mA I DD2,3 I DD2,3 =60mA =100mA =120mA 2.5 3.0 10 +V 0 1.0 1.5 CONT =2.0V 2.5 3.0 DD2,3 =40mA I DD2,3 =20mA 1.5 2.0 Freq [ GHz ] 2.0 Freq [ GHz ] Intput Return Loss vs. Frequency V =V =V =3V,I =130mA at T =25 C DD1 STB DD2,3 DD2,3 a 0 +V =0.0V +V =2.0V CONT o Output Return Loss vs. Frequency V =V =V =3V,I =130mA at T =25 C DD1 STB DD2,3 DD2,3 a 0 +V =0.0V CONT -5 -10 -15 -20 -25 -30 -35 -40 1.0 1.5 2.0 Freq [ GHz ] 2.5 3.0 +V CONT o -5 +V CONT =1.1V Output Return Loss [ dB ] CONT Input Return Loss [ dB ] =2.0V =1.1V +V CONT =0.9V -10 +V -15 CONT +V CONT =0.9V -20 1.0 1.5 2.0 Freq [ GHz ] 2.5 3.0 - 10 - NJG1309VB2 nTYPICAL CHARACTERISTICS Output Power,Gain vs. Input Power V DD1 =V STB =V DD2,3 =3V,I idle =130mA,f=1.9GHz at T =25 C a o Output Power,Gain vs. Input Power V DD1 =V STB =V DD2,3 =3V,I idle =130mA,f=1.765GHz at T =25 C a o 24 22 Output Power [ dBm ] 20 18 16 14 12 10 8 -30 -25 +V =0.0V +V CONT CONT =0.0V 45 0.9V 1.1V 40 Gain:Power Gain [ dB ] 35 30 Output Power [ dBm ] 24 22 +VCONT =0.0V 20 18 16 14 12 10 0.9V +V CONT =0.0V 0.9V 1.1V 45 40 35 Gain:Power Gain [ dB ] o o 0.9V 1.1V 1.1V 30 25 20 15 10 5 5 10 25 20 15 10 5 -20 -15 -10 -5 Input Power [ dBm ] 0 5 8 -30 -25 -20 -15 -10 -5 0 Input Power [ dBm ] Output Power,IDD2,3 vs. Input Power V =V =V =3V,I =130mA,f=1.9GHz at T =25 C DD1 STB DD2,3 idle a 260 24 +V =0.0V 0.9V CONT 1.1V 240 22 20 18 16 14 12 10 8 -30 -25 -20 -15 -10 -5 Input Power [ dBm ] 0 5 +V CONT o Output Power,IDD2,3 vs. Input Power V DD1 =V STB =V DD2,3 =3V,I idle =130mA,f=1.765GHz at T =25 C a [ mA ] +V CONT =0.0V 0.9V 1.1V 22 Output Power [ dBm ] 20 18 16 14 12 10 8 -30 -25 -20 -15 -10 -5 0 Input Power [ dBm ] 5 +V CONT 240 220 =0.0V 0.9V 1.1V 200 180 160 140 120 100 10 Output Power [ dBm ] =0.0V 1.1V 200 180 160 140 120 100 0.9V :Operation Current at V DD2,3 Output Power,PAE vs. Input Power V PAE:Power Added Efficiency [ % ] =V =V =3V,I =130mA,f=1.9GHz at T =25 C DD1 STB DD2,3 idle a 24 80 +V =0.0V 0.9V CONT 1.1V 22 70 20 18 16 14 12 10 8 -30 -25 -20 -15 -10 -5 Input Power [ dBm ] 0 5 +V CONT o I Output Power,PAE vs. Input Power V DD1 =V STB =V DD2,3 =3V,I idle =130mA,f=1.765GHz at T =25 C a 24 22 Output Power [ dBm ] 20 18 16 14 12 10 CONT 70 60 50 +V CONT 60 50 =0.0V 0.9V 40 1.1V 30 20 10 0 =0.0V 0.9V 40 1.1V 30 20 10 5 0 10 8 -30 -25 -20 -15 -10 -5 0 Input Power [ dBm ] - 11 - PAE:Power Added Efficiency [ % ] +V =0.0V 0.9V 1.1V 80 Output Power [ dBm ] I DD2,3 :Operation Current at V 220 DD2,3 DD2,3 [ mA ] 24 260 NJG1309VB2 nTYPICAL CHARACTERISTICS Gain,GCONT vs. +VCONT V 40 Gain:Power Gain [ dB ] DD1 Gain,GCONT vs. +VCONT V 20 :Variable Gain [ dB ] Gain:Power Gain [ dB ] 40 DD1 =V STB =V DD2,3 =3V,I idle =130mA o a =V STB =V DD2,3 =3V,I idle =130mA o a f=1.9GHz,P =21dBm at T =25 C out f=1.765GHz,P =21dBm at T =25 C out 20 :Variable Gain [ dB ] I :Operation Current at +V GG GG 35 15 35 15 30 10 30 10 CONT G 20 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 +V :Gain Controlled Voltage [ V ] CONT 20 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 +V :Gain Controlled Voltage [ V ] CONT Gain vs. Iidle V 44 42 40 38 36 34 90 100 110 120 130 140 150 160 170 Iidle:Idle Current at V (RF OFF) [ mA ] DD2,3 DD1 IDD2,3 vs. Iidle CONT o =V STB =V DD2,3 =3.0V,+V =0V [ mA ] 180 175 V DD1 =V STB =V DD2,3 =3.0V,+V f=1.9GHz,P =21dBm T =25 C out a f=1.9GHz,P =21dBm T =25 C out a CONT o =0V VDD2,3=4.0V V V DD2,3 =5.2V DD2,3 3.5V 3.0V 5.2V 2.9V Gain:Power Gain [ dB ] :Operation Current at V 170 165 160 155 150 145 V DD2,3 DD2,3 =4.0V =3.0V V V DD2,3 =2.9V DD2,3 =3.5V DD2,3 140 90 100 110 120 130 140 150 160 170 Iidle:Idle Current at V (RF OFF) [ mA ] DD2,3 I Gain,IDD2,3 vs. Ta V 44 43 Gain:Power Gain [ dB ] 42 41 40 39 38 37 36 -50 140 0 50 100 o T :Ambient Temperature [ C ] a DD1 IDD1,IGG vs. Ta =130mA o =V STB =V DD2,3 =3V,+V CONT =0V,I a idle V [ mA ] [ mA ] 160 0.92 0.90 0.88 0.86 0.84 DD1 =V STB =V DD2,3 =3V,+V out CONT =0V,I a idle =130mA o f=1.9GHz,P =21dBm at T =25 C out f=1.9GHz,P =21dBm at T =25 C [ uA ] 2.6 2.4 2.2 2.0 1.8 1.6 0 50 100 o T :Ambient Temperature [ C ] a DD2,3 150 145 :Operation Current at V DD2,3 DD1 :Operation Current at V 155 DD1 0.82 -50 - 12 - I I G CONT 25 5 25 5 NJG1309VB2 nTYPICAL CHARACTERISTICS Harmonics Spectrum VDD1=VSTB=VDD2,3=3V,Iidle=130mA +VCONT =0V,freq=1.9GHz,Pout=21dB 1.9GHz Band Spectrum VDD1=VSTB=VDD2,3=3V,Iidle=130mA +VCONT =0V,freq=1.9GHz,Pout=21d - 13 - NJG1309VB2 nTYPICAL CHARACTERISTICS Scattering Parameters VDD1=VSTB=VDD2,3=3.0V, IDD2,3=130mA, +VCONT=0.0 - 14 - NJG1309VB2 nRECOMMENDED CIRCUIT (Top View) - 15 - NJG1309VB2 nRECOMMENDED PCB DESIGN (Top View) PCB +VGG VSTB VDD1 C12 C9 C5 C1 RFin C6 C2 L2 RFout C3 C7 C4 C8 +VCONT VDD2,3 C11 FR-4 t=0.2mm PCB Size 17.5mmX17.0mm Microstrip Line Width w=0.4mm(Zo=50, RFin and RFout port) C10 Notes [1] CMOS IC negative voltage generator has Internal CR oscillator, therefor to reduction of noise, decoupling capacitor(C12) should be connected between the 20pin and the GND. [2] Chip parts as follows should be connected to the leads of IC as near as possible. (1) 3pin - C1 (2) 8pin - C2 (3) 13pin - L1 (4) 15pin - C3 [3] Chip parts list Parts ID C1~C4 C5~C8 C9~C11 C12 L2 Constant 30pF 1000pF 0.01uF 1uF 10nH Note MURATA GRM36 Series MURATA GRM36 Series MURATA GRM39 Series MURATA GRM39 Series TAIYO-YUDEN HK1608 - 16 - NJG1309VB2 nPACKAGE OUTLINE (SSOP20-B2) Lead material Lead surface finish Molding material UNIT Weight : Copper : Solder plating : Epoxy resin : mm : 66mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 17 - |
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